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AUIRFR4105 hexfet ? power mosfet pd - 97597a www.kersemi.com 1
features advanced planar technology low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated repetitive avalanche allowed up totjmax lead-free, rohs compliant automotive qualified * gds gate drain source d-pak AUIRFR4105 absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. s d g parameter units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v a i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) thermal resistance parameter typ. max. units r jc junction-to-case ??? 2.2 r ja junction-to-ambient (pcb mount) ** ??? 50 c/w r ja junction-to-ambient ??? 110 300 68 0.45 20 6.8 65 16 5.0 -55 to + 175 max. 27 19 100 20 description specifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. v (br)dss 55v r ds(on) max. 45m i d (silicon limited) 27a i d (package limited) 20a
AUIRFR4105 2 www.kersemi.com s d g notes: v dd = 25v, starting t j = 25c, l = 410 h r g = 25 , i as = 16a. (see figure 12)
repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) i sd
16a, di/dt
420a/ s, v dd
v (br)dss ,
t j
175c.
r is measured at tj approximately 90c. calculated continuous current based on maximum allowable junction temperature; package limitation current = 20a. pulse width
300 s; duty cycle
2%. static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 55 ??? ??? v v (br)dss / t j breakdown voltage temp. coefficient ??? 0.052 ??? v/c r ds(on) static drain-to-source on-resistance ??? ??? 45 m v gs(th) gate threshold voltage 2.0 ??? 4.0 v gfs forward transconductance 6.5 ??? ??? s i dss drain-to-source leakage current ??? ??? 25 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? ??? 34 q gs gate-to-source charge ??? ??? 6.8 nc q gd gate-to-drain ("miller") charge ??? ??? 14 t d(on) turn-on delay time ??? 7.0 ??? t r rise time ??? 49 ??? t d(off) turn-off delay time ??? 31 ??? ns t f fall time ??? 40 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 700 ??? c oss output capacitance ??? 240 ??? pf c rss reverse transfer capacitance ??? 100 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 27 (body diode) a i sm pulsed source current ??? ??? 100 (body diode) v sd diode forward voltage ??? ??? 1.6 v t rr reverse recovery time ??? 57 86 ns q rr reverse recovery charge ??? 130 200 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v ds = 25v, i d = 16a i d = 16a v ds = 44v conditions r d = 1.8 , see fig. 10 v gs = 0v v ds = 25v ? = 1.0mhz, see fig. 5 v gs = 20v v gs = -20v mosfet symbol showing the integral reverse p-n junction diode. t j = 25c, i s = 16a, v gs = 0v t j = 25c, i f = 16a di/dt = 100a/ s conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 16a v ds = v gs , i d = 250 a v ds = 55v, v gs = 0v v ds = 44v, v gs = 0v, t j = 150c conditions v gs = 10v, see fig. 6 & 13 v dd = 28v i d = 16a r g = 18
AUIRFR4105 www..kersemi.com 3 qualification information ? d-pak msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (+/- 1125v) ??? aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m2 (+/- 200v) ??? aec-q101-002 human body model class h1b (+/- 900v) ??? aec-q101-001
AUIRFR4105 4 www.kersemi.com fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 1. typical output characteristics fig 2. typical output characteristics 0.1 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20 s pulse width t = 25c c a 4.5v 0.1 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v a 4.5v 20 s pulse width t = 175c c 1 10 100 45678910 t = 25c j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 25v 20 s pulse width t = 175c j ds 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 26a d
AUIRFR4105 www.kersemi.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 200 400 600 800 1000 1200 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 10203040 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a for test circuit see figure 13 v = 44v v = 28v ds ds i = 16a d 1 10 100 1000 0.4 0.8 1.2 1.6 2.0 t = 25c j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a t = 175c j 1 10 100 1000 1 10 100 v , drain-to-source voltage (v) ds i , drain current (a) operation in this area limited by r d ds(on) 10 s 100 s 1ms a t = 25c t = 175c single pulse c j
AUIRFR4105 6 www.kersemi.com fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 5 10 15 20 25 30 t , case temperature ( c) i , drain current (a) c d limited by package
AUIRFR4105 www.kersemi.com 7 q g q gs q gd v g charge +&, fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 10v 0 20 40 60 80 100 120 140 25 50 75 100 125 150 175 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) v = 25v dd i top 6.5a 11a bottom 16a d
AUIRFR4105 8 www.kersemi.com p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit r g v dd ? dv/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t circuit layout considerations ?
low stray inductance
? ground plane
? low leakage inductance current transformer -
AUIRFR4105 www.kersemi.com 9 d-pak part marking information .# /0/ 1101212 "0"* 34 5) 5#
AUIRFR4105 10 www.kersemi.com
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tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch

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